Abstract
In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/ N2 or CH4 /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.
Original language | English (US) |
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Pages (from-to) | 143-147 |
Number of pages | 5 |
Journal | Surface and Coatings Technology |
Volume | 167 |
Issue number | 2-3 |
DOIs | |
State | Published - Apr 22 2003 |
Externally published | Yes |
Keywords
- Electron emitter
- Electron field emission
- MPECVD
- Nano-diamond film
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry