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Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization
Alexander D. Mottram*, Pichaya Pattanasattayavong, Ivan Isakov, Gwen Wyatt-Moon, Hendrik Faber, Yen Hung Lin, Thomas D. Anthopoulos
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
11
Scopus
citations