Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

K. J. Yang; T. J. King; C. Hu; S. Levy; Husam Niman Alshareef

doi:10.1016/S0038-1101(02)00309-X

Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

K. J. Yang^*, T. J. King, C. Hu, S. Levy, Husam Niman Alshareef

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Effective electron mobility has been studied in MOSFETs with ultrathin silicon nitride/oxynitride stacked gate dielectrics formed by rapid thermal chemical vapor deposition. The mobility in these devices is degraded compared to those with SiO₂ (the universal mobility curve). Quantitative analysis suggests that the degradation is due to coulombic scattering from both bulk charges in the dielectric and interface trapped charges. Finally, after investigating the impact of process parameters on mobility, it is concluded that interfacial oxynitride grown at higher pressure in nitric oxide is advantageous for achieving thinner effective stack thicknesses and for preserving electron mobility.

Original language	English (US)
Pages (from-to)	149-153
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(02)00309-X
State	Published - Jan 1 2003

Keywords

Charge scattering
Electron mobility
RTCVD
Silicon nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00309-X

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title = "Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics",

abstract = "Effective electron mobility has been studied in MOSFETs with ultrathin silicon nitride/oxynitride stacked gate dielectrics formed by rapid thermal chemical vapor deposition. The mobility in these devices is degraded compared to those with SiO2 (the universal mobility curve). Quantitative analysis suggests that the degradation is due to coulombic scattering from both bulk charges in the dielectric and interface trapped charges. Finally, after investigating the impact of process parameters on mobility, it is concluded that interfacial oxynitride grown at higher pressure in nitric oxide is advantageous for achieving thinner effective stack thicknesses and for preserving electron mobility.",

keywords = "Charge scattering, Electron mobility, RTCVD, Silicon nitride",

author = "Yang, {K. J.} and King, {T. J.} and C. Hu and S. Levy and Alshareef, {Husam Niman}",

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T1 - Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

AU - Yang, K. J.

AU - King, T. J.

AU - Hu, C.

AU - Levy, S.

AU - Alshareef, Husam Niman

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Effective electron mobility has been studied in MOSFETs with ultrathin silicon nitride/oxynitride stacked gate dielectrics formed by rapid thermal chemical vapor deposition. The mobility in these devices is degraded compared to those with SiO2 (the universal mobility curve). Quantitative analysis suggests that the degradation is due to coulombic scattering from both bulk charges in the dielectric and interface trapped charges. Finally, after investigating the impact of process parameters on mobility, it is concluded that interfacial oxynitride grown at higher pressure in nitric oxide is advantageous for achieving thinner effective stack thicknesses and for preserving electron mobility.

AB - Effective electron mobility has been studied in MOSFETs with ultrathin silicon nitride/oxynitride stacked gate dielectrics formed by rapid thermal chemical vapor deposition. The mobility in these devices is degraded compared to those with SiO2 (the universal mobility curve). Quantitative analysis suggests that the degradation is due to coulombic scattering from both bulk charges in the dielectric and interface trapped charges. Finally, after investigating the impact of process parameters on mobility, it is concluded that interfacial oxynitride grown at higher pressure in nitric oxide is advantageous for achieving thinner effective stack thicknesses and for preserving electron mobility.

KW - Charge scattering

KW - Electron mobility

KW - RTCVD

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=0037212278&partnerID=8YFLogxK

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DO - 10.1016/S0038-1101(02)00309-X

M3 - Article

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SN - 0038-1101

VL - 47

SP - 149

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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