Electron spin relaxation in organic semiconductors probed through μSR

L. Nuccio; L. Schulz; M. Willis; F. L. Pratt; M. Heeney; N. Stingelin; C. Bernhard; A. J. Drew

doi:10.1088/1742-6596/292/1/012004

Electron spin relaxation in organic semiconductors probed through μSR

L. Nuccio, L. Schulz, M. Willis, F. L. Pratt, M. Heeney, N. Stingelin, C. Bernhard, A. J. Drew

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.

Original language	English (US)
Title of host publication	Journal of Physics: Conference Series
Publisher	Institute of Physics Publishinghelen.craven@iop.org
DOIs	https://doi.org/10.1088/1742-6596/292/1/012004
State	Published - Jan 1 2011
Externally published	Yes

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10.1088/1742-6596/292/1/012004

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title = "Electron spin relaxation in organic semiconductors probed through μSR",

abstract = "Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.",

author = "L. Nuccio and L. Schulz and M. Willis and Pratt, {F. L.} and M. Heeney and N. Stingelin and C. Bernhard and Drew, {A. J.}",

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T1 - Electron spin relaxation in organic semiconductors probed through μSR

AU - Nuccio, L.

AU - Schulz, L.

AU - Willis, M.

AU - Pratt, F. L.

AU - Heeney, M.

AU - Stingelin, N.

AU - Bernhard, C.

AU - Drew, A. J.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.

AB - Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.

UR - https://iopscience.iop.org/article/10.1088/1742-6596/292/1/012004

UR - http://www.scopus.com/inward/record.url?scp=79956150059&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/292/1/012004

DO - 10.1088/1742-6596/292/1/012004

M3 - Conference contribution

BT - Journal of Physics: Conference Series

PB - Institute of Physics Publishinghelen.craven@iop.org

ER -

Electron spin relaxation in organic semiconductors probed through μSR

Abstract

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