Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

George Adamopoulos; Aneeqa Bashir; Paul H. Wöbkenberg; Donal D.C. Bradley; Thomas D. Anthopoulos

doi:10.1063/1.3238466

Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

George Adamopoulos^*, Aneeqa Bashir, Paul H. Wöbkenberg, Donal D.C. Bradley, Thomas D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm²/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

Original language	English (US)
Article number	133507
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3238466
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air",

abstract = "We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.",

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AU - Wöbkenberg, Paul H.

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

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Y1 - 2009

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AB - We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

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JO - Applied Physics Letters

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Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

Abstract

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