Abstract
Electroresistance (ER) effects were systematically studied for NSMO, LBMO, and 0.5-doped LCMO channels. A large ER was observed in a LCMO channel subjected to E-field through a PZT gate. The magnitudes of the effects observed in NSMO, LBMO, and 0.5-doped LCMO channels are much smaller.
Original language | English (US) |
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Pages (from-to) | 5998-6001 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 86 |
Issue number | 26 I |
DOIs | |
State | Published - Jun 25 2001 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy