TY - JOUR
T1 - Electrostatic Modulation of LaAlO 3 /SrTiO 3 Interface Transport in an Electric Double-Layer Transistor
AU - Lin, Wei-Nan
AU - Ding, Jun-Feng
AU - Wu, Shu-Xiang
AU - Li, Yong-Feng
AU - Lourembam, James
AU - Shannigrahi, Santiranjan
AU - Wang, Shi-Jie
AU - Wu, Tao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Research Foundation, Singapore (Grant No. NRF-CRP4-2008-04).
PY - 2013/11/13
Y1 - 2013/11/13
N2 - Electrostatic modulation on the two-dimensional transport of the LaAlO3/SrTiO3 interface in an electric double-layer transistor is demonstrated. The induced insulator-to-metal transition exhibits the nature of charge-density-driven percolation, and the Kondo effect governs the low-temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two-dimensional transport of oxide interfaces.
AB - Electrostatic modulation on the two-dimensional transport of the LaAlO3/SrTiO3 interface in an electric double-layer transistor is demonstrated. The induced insulator-to-metal transition exhibits the nature of charge-density-driven percolation, and the Kondo effect governs the low-temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two-dimensional transport of oxide interfaces.
UR - http://hdl.handle.net/10754/575589
UR - http://doi.wiley.com/10.1002/admi.201300001
UR - http://www.scopus.com/inward/record.url?scp=84918524891&partnerID=8YFLogxK
U2 - 10.1002/admi.201300001
DO - 10.1002/admi.201300001
M3 - Article
SN - 2196-7350
VL - 1
SP - 1300001
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 1
ER -