Electrostatically tunable nanomechanical shallow arches

Syed N.R. Kazmi, Amal Z. Hajjaj, Pedro M.F.J. Costa, Mohammad I. Younis*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

Original languageEnglish (US)
Title of host publication22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems
PublisherAmerican Society of Mechanical Engineers (ASME)
ISBN (Electronic)9780791858165
DOIs
StatePublished - 2017
EventASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017 - Cleveland, United States
Duration: Aug 6 2017Aug 9 2017

Publication series

NameProceedings of the ASME Design Engineering Technical Conference
Volume4

Conference

ConferenceASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017
Country/TerritoryUnited States
CityCleveland
Period08/6/1708/9/17

ASJC Scopus subject areas

  • Mechanical Engineering
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design
  • Modeling and Simulation

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