Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Teng Han Huang, Po Kang Yang, Wen Yuan Chang, Jui Fen Chien, Chen Fang Kang, Miin Jang Chen, Jr Hau He*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

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