TY - JOUR
T1 - Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb
AU - Zhang, Qingyun
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2016/1/21
Y1 - 2016/1/21
N2 - Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS2. Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.
AB - Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS2. Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.
UR - http://hdl.handle.net/10754/594973
UR - http://link.aps.org/doi/10.1103/PhysRevB.93.045312
UR - http://www.scopus.com/inward/record.url?scp=84955500601&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.93.045312
DO - 10.1103/PhysRevB.93.045312
M3 - Article
SN - 2469-9950
VL - 93
JO - Physical Review B
JF - Physical Review B
IS - 4
ER -