TY - JOUR
T1 - Engineering Band-Type Alignment in CsPbBr
3
Perovskite-Based Artificial Multiple Quantum Wells
AU - Lee, Kwangjae
AU - Merdad, Noor A.
AU - Maity, Partha
AU - El-Demellawi, Jehad K.
AU - Lui, Zhixiong
AU - Sinatra, Lutfan
AU - Zhumekenov, Ayan A.
AU - Hedhili, Mohamed N.
AU - Min, Jung-Wook
AU - Min, Jung-Hong
AU - Gutiérrez-Arzaluz, Luis
AU - Anjum, Dalaver H.
AU - Wei, Nini
AU - Ooi, Boon S.
AU - Alshareef, Husam N.
AU - Mohammed, Omar F.
AU - Bakr, Osman
N1 - KAUST Repository Item: Exported on 2021-03-26
Acknowledgements: K.J.L. and N.A.M. contributed equally to this work. The authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).
PY - 2021/3/24
Y1 - 2021/3/24
N2 - Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites—the leading class of emerging semiconductors—building a variety of bandgap alignments (i.e., band-types) in MQWs is not yet realized owing to the limitations of the current set of used barrier materials. Here, artificial perovskite-based MQWs using 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), tris-(8-hydroxyquinoline)aluminum, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as quantum barrier materials are introduced. The structures of three different five-stacked perovskite-based MQWs each exhibiting a different band offset with CsPbBr3 in the conduction and valence bands, resulting in a variety of MQW band alignments, i.e., type-I or type-II structures, are shown. Transient absorption spectroscopy reveals the disparity in charge carrier dynamics between type-I and type-II MQWs. Photodiodes of each type of perovskite artificial MQWs show entirely different carrier behaviors and photoresponse characteristics. Compared with bulk perovskite devices, type-II MQW photodiodes demonstrate a more than tenfold increase in the rectification ratio. The findings open new opportunities for producing halide-perovskite-based quantum devices by bandgap engineering using simple quantum barrier considerations.
AB - Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites—the leading class of emerging semiconductors—building a variety of bandgap alignments (i.e., band-types) in MQWs is not yet realized owing to the limitations of the current set of used barrier materials. Here, artificial perovskite-based MQWs using 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), tris-(8-hydroxyquinoline)aluminum, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as quantum barrier materials are introduced. The structures of three different five-stacked perovskite-based MQWs each exhibiting a different band offset with CsPbBr3 in the conduction and valence bands, resulting in a variety of MQW band alignments, i.e., type-I or type-II structures, are shown. Transient absorption spectroscopy reveals the disparity in charge carrier dynamics between type-I and type-II MQWs. Photodiodes of each type of perovskite artificial MQWs show entirely different carrier behaviors and photoresponse characteristics. Compared with bulk perovskite devices, type-II MQW photodiodes demonstrate a more than tenfold increase in the rectification ratio. The findings open new opportunities for producing halide-perovskite-based quantum devices by bandgap engineering using simple quantum barrier considerations.
UR - http://hdl.handle.net/10754/668259
UR - https://onlinelibrary.wiley.com/doi/10.1002/adma.202005166
U2 - 10.1002/adma.202005166
DO - 10.1002/adma.202005166
M3 - Article
C2 - 33759267
SN - 0935-9648
SP - 2005166
JO - Advanced Materials
JF - Advanced Materials
ER -