Enhanced CO 2 reduction capability in an AlGaN/GaN photoelectrode

Satoshi Yotsuhashi; Masahiro Deguchi; Hiroshi Hashiba; Yuji Zenitani; Reiko Hinogami; Yuka Yamada; Kazuhiro Ohkawa

doi:10.1063/1.4729298

Enhanced CO ₂ reduction capability in an AlGaN/GaN photoelectrode

Satoshi Yotsuhashi^*, Masahiro Deguchi, Hiroshi Hashiba, Yuji Zenitani, Reiko Hinogami, Yuka Yamada, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Light illumination of a gallium nitride photoelectrode creates separate electron-hole pairs that drive water oxidation and CO ₂ reduction reactions. Here, we show enhanced photocurrent in an AlGaN/GaN device that consists of an unintentionally doped (uid-) AlGaN photoabsorption layer and an n ⁺-GaN electrical-conduction layer. The production rate of formic acid by CO ₂ conversion in the uid-AlGaN/n ⁺-GaN photoelectrode is about double that in the uid-GaN/n ⁺-GaN device. This improvement is most likely due to the effect of internal bias in the uid-AlGaN layer generated by the polarization effect, which improves electron-hole separation.

Original language	English (US)
Article number	243904
Journal	Applied Physics Letters
Volume	100
Issue number	24
DOIs	https://doi.org/10.1063/1.4729298
State	Published - Jun 11 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhanced CO 2 reduction capability in an AlGaN/GaN photoelectrode",

abstract = "Light illumination of a gallium nitride photoelectrode creates separate electron-hole pairs that drive water oxidation and CO 2 reduction reactions. Here, we show enhanced photocurrent in an AlGaN/GaN device that consists of an unintentionally doped (uid-) AlGaN photoabsorption layer and an n +-GaN electrical-conduction layer. The production rate of formic acid by CO 2 conversion in the uid-AlGaN/n +-GaN photoelectrode is about double that in the uid-GaN/n +-GaN device. This improvement is most likely due to the effect of internal bias in the uid-AlGaN layer generated by the polarization effect, which improves electron-hole separation.",

author = "Satoshi Yotsuhashi and Masahiro Deguchi and Hiroshi Hashiba and Yuji Zenitani and Reiko Hinogami and Yuka Yamada and Kazuhiro Ohkawa",

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T1 - Enhanced CO 2 reduction capability in an AlGaN/GaN photoelectrode

AU - Yotsuhashi, Satoshi

AU - Deguchi, Masahiro

AU - Hashiba, Hiroshi

AU - Zenitani, Yuji

AU - Hinogami, Reiko

AU - Yamada, Yuka

AU - Ohkawa, Kazuhiro

PY - 2012/6/11

Y1 - 2012/6/11

N2 - Light illumination of a gallium nitride photoelectrode creates separate electron-hole pairs that drive water oxidation and CO 2 reduction reactions. Here, we show enhanced photocurrent in an AlGaN/GaN device that consists of an unintentionally doped (uid-) AlGaN photoabsorption layer and an n +-GaN electrical-conduction layer. The production rate of formic acid by CO 2 conversion in the uid-AlGaN/n +-GaN photoelectrode is about double that in the uid-GaN/n +-GaN device. This improvement is most likely due to the effect of internal bias in the uid-AlGaN layer generated by the polarization effect, which improves electron-hole separation.

AB - Light illumination of a gallium nitride photoelectrode creates separate electron-hole pairs that drive water oxidation and CO 2 reduction reactions. Here, we show enhanced photocurrent in an AlGaN/GaN device that consists of an unintentionally doped (uid-) AlGaN photoabsorption layer and an n +-GaN electrical-conduction layer. The production rate of formic acid by CO 2 conversion in the uid-AlGaN/n +-GaN photoelectrode is about double that in the uid-GaN/n +-GaN device. This improvement is most likely due to the effect of internal bias in the uid-AlGaN layer generated by the polarization effect, which improves electron-hole separation.

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DO - 10.1063/1.4729298

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Enhanced CO ₂ reduction capability in an AlGaN/GaN photoelectrode

Abstract

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