Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls

Fatimah Alreshidi, Lih Ren Chen, Mohammed Najmi, Bin Xin, Hadeel Alamoudi, Georgian Melinte, Nimer Wehbe, Daisuke Iida, Kazuhiro Ohkawa, Tien Chang Lu, Iman S. Roqan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We study the impact of strain engineering by exploring the influence of the number of superlattice (SL) layers underneath InGaN/GaN multiple quantum wells (MQWs) on the optical properties of InxGa1-xN/GaN MQWs grown on patterned sapphire by metal-organic chemical vapor deposition while retaining the same composition and MQW periods. X-ray diffraction and reciprocal space mapping show that the strain initially increases with the number of SLs in the structure followed by a slight relaxation. Scanning electron microscopy analysis indicates that the desired strain is obtained by increasing the number of SL pairs up to 12 due to which the V-pit density and size (>270 nm in diameter) increase. Scanning transmission electron microscopy reveals that such large-sized V-pits [with large sidewalls comprising ultrathin MQWs and SLs (<1 nm)] emerge in the n-GaN layer below the SLs, leading to high n-GaN quality as confirmed by temperature-dependent photoluminescence (PL) and PL excitation measurements as defect-related emission in n-GaN decreases as the V-pit density increases. Low-temperature PL spectra show a higher-energy emission centered at 402 nm besides the MQW emission at ∼454-458 nm, while room-temperature cathodoluminescence mapping reveals that this higher-energy emission is due to the ultrathin MQW + SL structures surrounding V-pits, forming ultrathin subquantum well (sub-QW). We show, for the first time, that the carrier repopulation process between MQWs and sub-QW caused by a high density of V-pits through the strain engineering process can be a significant factor in enhancing the optical quality and efficiency. These findings provide valuable insight into the impact of strain engineering that can govern high-efficiency light-emitting diode (LED) performance.

Original languageEnglish (US)
Pages (from-to)220-229
Number of pages10
JournalACS Applied Optical Materials
Volume2
Issue number1
DOIs
StatePublished - Jan 26 2024

Keywords

  • effect emission
  • III-nitrides
  • light-emitting devices
  • relaxation layer
  • strain relaxation
  • V-pit-related emission

ASJC Scopus subject areas

  • Spectroscopy
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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