TY - JOUR
T1 - Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design
AU - Chen, Qian
AU - Dai, Jiangnan
AU - Li, Xiaohang
AU - Gao, Yang
AU - Long, Hanling
AU - Zhang, Zi-hui
AU - Chen, Changqing
AU - Kuo, Hao Chung
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Key Research and Development Program of China under Grant 2018YFB0406602, and in part by the National Natural Science Foundation of China under Grant 11574166, Grant 61377034, and Grant 61774065.
PY - 2019/10/22
Y1 - 2019/10/22
N2 - Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.
AB - Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.
UR - http://hdl.handle.net/10754/660988
UR - https://ieeexplore.ieee.org/document/8879560/
UR - http://www.scopus.com/inward/record.url?scp=85076281188&partnerID=8YFLogxK
U2 - 10.1109/LED.2019.2948952
DO - 10.1109/LED.2019.2948952
M3 - Article
SN - 0741-3106
VL - 40
SP - 1925
EP - 1928
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 12
ER -