Abstract
We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs
and suppressed electron overflow at high current densities
Original language | English (US) |
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Pages (from-to) | 30423 |
Journal | Optics Express |
Volume | 28 |
Issue number | 21 |
DOIs | |
State | Published - Sep 20 2020 |