TY - JOUR
T1 - Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series
AU - Elkhatib, Tamer A.
AU - Kachorovskiǐ, Valentin Yu
AU - Stillman, William J.
AU - Veksler, Dmitry B.
AU - Salama, Khaled N.
AU - Zhang, Xicheng
AU - Shur, Michael S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2010/2
Y1 - 2010/2
N2 - We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.
AB - We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.
UR - http://hdl.handle.net/10754/561448
UR - http://ieeexplore.ieee.org/document/5395615/
UR - http://www.scopus.com/inward/record.url?scp=76849091672&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2009.2037872
DO - 10.1109/TMTT.2009.2037872
M3 - Article
SN - 0018-9480
VL - 58
SP - 331
EP - 339
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 2
ER -