Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

Engineering

• Terahertz 100%
• Field-Effect Transistor 33%
• Current Drain 33%
• Bias Voltage 33%
• Channel Transistor 33%
• Plasmonics 33%
• Responsivity 33%
• Gallium Arsenide 33%
• Indium Gallium Arsenide 33%
• Saturation Regime 33%
• Rectification 33%
• Room Temperature 33%

Keyphrases

• Plasma Wave Detection 100%
• Linked Fields 33%
• Plasmonic Structures 33%
• InP HEMT 33%
• THz Response 33%
• Noise Equivalent Power 33%
• Room Temperature Detection 33%
• Saturation Regime 33%