Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

Xianhu Liang; Bin Yuan; Yuanyuan Shi; Fei Hui; Xu Jing; Mario Lanza; Felix Palumbo

doi:10.1109/IRPS.2018.8353666

Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Xu Jing, Mario Lanza, Felix Palumbo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Electronic devices using graphene and other two dimensional (2D) materials have shown interesting performances. However, the interaction of conductive and semiconducting 2D materials with traditional dielectrics (which are necessary to build up the devices) is still very poor (i.e. the fabrication is challenging and it generates abundant interface defects). Hexagonal Boron Nitride (h-BN) is a layered insulating material that could be used as dielectric stack in 2D materials based devices, as it shows excellent insulating ability and a perfect interaction with graphene and other 2D materials. Here we show the first device-level reliability study of h-BN dielectric stacks and describe the dielectric breakdown (BD) process.

Original language	English (US)
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	PGD.61-PGD.64
Number of pages	1
ISBN (Print)	9781538654798
DOIs	https://doi.org/10.1109/IRPS.2018.8353666
State	Published - May 25 2018
Externally published	Yes

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10.1109/IRPS.2018.8353666

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title = "Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity",

abstract = "Electronic devices using graphene and other two dimensional (2D) materials have shown interesting performances. However, the interaction of conductive and semiconducting 2D materials with traditional dielectrics (which are necessary to build up the devices) is still very poor (i.e. the fabrication is challenging and it generates abundant interface defects). Hexagonal Boron Nitride (h-BN) is a layered insulating material that could be used as dielectric stack in 2D materials based devices, as it shows excellent insulating ability and a perfect interaction with graphene and other 2D materials. Here we show the first device-level reliability study of h-BN dielectric stacks and describe the dielectric breakdown (BD) process.",

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Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity. / Liang, Xianhu; Yuan, Bin; Shi, Yuanyuan et al.
IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. PGD.61-PGD.64.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

AU - Liang, Xianhu

AU - Yuan, Bin

AU - Shi, Yuanyuan

AU - Hui, Fei

AU - Jing, Xu

AU - Lanza, Mario

AU - Palumbo, Felix

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2018/5/25

Y1 - 2018/5/25

N2 - Electronic devices using graphene and other two dimensional (2D) materials have shown interesting performances. However, the interaction of conductive and semiconducting 2D materials with traditional dielectrics (which are necessary to build up the devices) is still very poor (i.e. the fabrication is challenging and it generates abundant interface defects). Hexagonal Boron Nitride (h-BN) is a layered insulating material that could be used as dielectric stack in 2D materials based devices, as it shows excellent insulating ability and a perfect interaction with graphene and other 2D materials. Here we show the first device-level reliability study of h-BN dielectric stacks and describe the dielectric breakdown (BD) process.

AB - Electronic devices using graphene and other two dimensional (2D) materials have shown interesting performances. However, the interaction of conductive and semiconducting 2D materials with traditional dielectrics (which are necessary to build up the devices) is still very poor (i.e. the fabrication is challenging and it generates abundant interface defects). Hexagonal Boron Nitride (h-BN) is a layered insulating material that could be used as dielectric stack in 2D materials based devices, as it shows excellent insulating ability and a perfect interaction with graphene and other 2D materials. Here we show the first device-level reliability study of h-BN dielectric stacks and describe the dielectric breakdown (BD) process.

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DO - 10.1109/IRPS.2018.8353666

M3 - Conference contribution

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SP - PGD.61-PGD.64

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

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