Enhanced response of bulk heterojunction polymer photodetectors upon incorporating CsPbBr 3 quantum dots

Zhongyuan Ren, Ying Su, Shaoqing Chen, Jiantao Wang, Changhao Wang, Changchun Wang, Pengfei Ma, Fanxu Meng, Qinghui Zeng, Hsing Lin Wang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

CsPbBr 3 quantum dots (QDs) were doped into a blend of poly(3-hexylthiophene) and indene-C 60 bisadduct to fabricate bulk heterojunction polymer photodetectors. The addition of the QDs significantly increased the shunt resistance of the device, thereby suppressing the reverse leakage current and improving both the signal-to-noise ratio and the specific detectivity. The photoresponse and recovery time both decreased because of the enhanced built-in electric field and improved charge carrier mobility.
Original languageEnglish (US)
JournalApplied Physics Letters
Volume113
Issue number25
DOIs
StatePublished - Dec 17 2018
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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