Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate

J. H. He; W. W. Wu; L. J. Chen

doi:10.1016/j.nimb.2005.04.096

Enhanced thermal and morphological stability of Ni(Si_1-xGe _x) growth on BF₂⁺-preamorphized Si _0.8Ge_0.2 substrate

J. H. He^*, W. W. Wu, L. J. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The stability of nickel germanosilicide formed on Ni thin films on Si _0.8Ge_0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si_1-xGe_x) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si _1-xGe_x) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si_1-xGe_x) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.

Original language	English (US)
Pages (from-to)	174-178
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	237
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.04.096
State	Published - Aug 2005
Externally published	Yes
Event	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - Duration: Oct 25 2004 → Oct 27 2004

Keywords

Germanosilicide
Implantation
Ni silicide
Preamorphization
SiGe

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2005.04.096

Cite this

@article{1fdb251c308840f3bd8d73a87aa41fac,

title = "Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate",

abstract = "The stability of nickel germanosilicide formed on Ni thin films on Si 0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1-xGex) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si 1-xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1-xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.",

keywords = "Germanosilicide, Implantation, Ni silicide, Preamorphization, SiGe",

author = "He, {J. H.} and Wu, {W. W.} and Chen, {L. J.}",

year = "2005",

month = aug,

doi = "10.1016/j.nimb.2005.04.096",

language = "English (US)",

volume = "237",

pages = "174--178",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-2",

note = "Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 ; Conference date: 25-10-2004 Through 27-10-2004",

}

Enhanced thermal and morphological stability of Ni(Si_1-xGe _x) growth on BF₂⁺-preamorphized Si _0.8Ge_0.2 substrate. / He, J. H.; Wu, W. W.; Chen, L. J.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2, 08.2005, p. 174-178.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate

AU - He, J. H.

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005/8

Y1 - 2005/8

N2 - The stability of nickel germanosilicide formed on Ni thin films on Si 0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1-xGex) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si 1-xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1-xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.

AB - The stability of nickel germanosilicide formed on Ni thin films on Si 0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1-xGex) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si 1-xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1-xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.

KW - Germanosilicide

KW - Implantation

KW - Ni silicide

KW - Preamorphization

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=23444458115&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.04.096

DO - 10.1016/j.nimb.2005.04.096

M3 - Conference article

AN - SCOPUS:23444458115

SN - 0168-583X

VL - 237

SP - 174

EP - 178

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

T2 - Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004

Y2 - 25 October 2004 through 27 October 2004

ER -