Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

Jiang Pu, Kaito Kanahashi, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Taishi Takenobu

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The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.
Original languageEnglish (US)
JournalPhysical Review B
Issue number1
StatePublished - Jul 27 2016


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