TY - JOUR
T1 - Enhanced UV emission of GaN nanowires functionalized by wider bandgap solution-processed p-MnO quantum dots
AU - Almalawi, Dhaifallah
AU - Lopatin, Sergei
AU - Mitra, Somak
AU - Flemban, Tahani Hassan
AU - Siladie, Alexandra-Madalina
AU - Gayral, Bruno
AU - Daudin, Bruno
AU - Roqan, Iman S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1319-01-01
Acknowledgements: Authors thanks KAUST for the finance support using the base fund number BAS/1/1319-01-01.
PY - 2020/7/4
Y1 - 2020/7/4
N2 - GaN-based UV light emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider bandgap (~ 5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ~ 3.9-fold (~ 290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ~1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy (TEM) reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider-bandgap p-MnO QDs to n-GaN NW leads to substantial emission enhancement and a greater radiative recombination contribution, due to the good band alignment between MnO QDs and GaN NW. This work provides valuable insight into an environmentally-friendly strategy for improving UV device performance.
AB - GaN-based UV light emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider bandgap (~ 5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ~ 3.9-fold (~ 290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ~1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy (TEM) reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider-bandgap p-MnO QDs to n-GaN NW leads to substantial emission enhancement and a greater radiative recombination contribution, due to the good band alignment between MnO QDs and GaN NW. This work provides valuable insight into an environmentally-friendly strategy for improving UV device performance.
UR - http://hdl.handle.net/10754/664124
UR - https://pubs.acs.org/doi/10.1021/acsami.0c07029
U2 - 10.1021/acsami.0c07029
DO - 10.1021/acsami.0c07029
M3 - Article
C2 - 32623885
SN - 1944-8244
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
ER -