Enhancement of light extraction efficiency in InGaN/GaN vertical blue light emitting diodes by surface patterning: Design and simulation

Rubina Get; Sumitra Singh; Amit Kumar Goyal; Sandeep Kumar; Ashok Kumar Lunia; Suchandan Pal; C. Dhanavantri

doi:10.1016/j.ijleo.2015.07.086

Enhancement of light extraction efficiency in InGaN/GaN vertical blue light emitting diodes by surface patterning: Design and simulation

Rubina Get, Sumitra Singh, Amit Kumar Goyal, Sandeep Kumar, Ashok Kumar Lunia, Suchandan Pal, C. Dhanavantri

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Light extraction of InGaN/GaN based surface-patterned vertical blue light emitting diodes (LEDs) is investigated by the use of ray-tracing approach. To optimize the light extraction efficiency of LEDs, various types of facet-patterning have been introduced on the free surfaces of the n-GaN epitaxial layer. A drastic increase in light extraction efficiency of the LED is observed due to increase of random and multiple scattering of light through patterned surfaces. The improvement in overall light extraction efficiency for the LEDs having rectangular and hexagonal patterning in free surfaces have been estimated around 2.25 and 3.39 times of that of the LED structure with smooth free surface (i.e., without any patterning), respectively.

Original language	English (US)
Pages (from-to)	3004-3006
Number of pages	3
Journal	Optik
Volume	126
Issue number	21
DOIs	https://doi.org/10.1016/j.ijleo.2015.07.086
State	Published - Nov 1 2015
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1016/j.ijleo.2015.07.086

Cite this

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title = "Enhancement of light extraction efficiency in InGaN/GaN vertical blue light emitting diodes by surface patterning: Design and simulation",

abstract = "Light extraction of InGaN/GaN based surface-patterned vertical blue light emitting diodes (LEDs) is investigated by the use of ray-tracing approach. To optimize the light extraction efficiency of LEDs, various types of facet-patterning have been introduced on the free surfaces of the n-GaN epitaxial layer. A drastic increase in light extraction efficiency of the LED is observed due to increase of random and multiple scattering of light through patterned surfaces. The improvement in overall light extraction efficiency for the LEDs having rectangular and hexagonal patterning in free surfaces have been estimated around 2.25 and 3.39 times of that of the LED structure with smooth free surface (i.e., without any patterning), respectively.",

author = "Rubina Get and Sumitra Singh and Goyal, {Amit Kumar} and Sandeep Kumar and Lunia, {Ashok Kumar} and Suchandan Pal and C. Dhanavantri",

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doi = "10.1016/j.ijleo.2015.07.086",

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T1 - Enhancement of light extraction efficiency in InGaN/GaN vertical blue light emitting diodes by surface patterning: Design and simulation

AU - Get, Rubina

AU - Singh, Sumitra

AU - Goyal, Amit Kumar

AU - Kumar, Sandeep

AU - Lunia, Ashok Kumar

AU - Pal, Suchandan

AU - Dhanavantri, C.

N1 - Generated from Scopus record by KAUST IRTS on 2023-10-12

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Light extraction of InGaN/GaN based surface-patterned vertical blue light emitting diodes (LEDs) is investigated by the use of ray-tracing approach. To optimize the light extraction efficiency of LEDs, various types of facet-patterning have been introduced on the free surfaces of the n-GaN epitaxial layer. A drastic increase in light extraction efficiency of the LED is observed due to increase of random and multiple scattering of light through patterned surfaces. The improvement in overall light extraction efficiency for the LEDs having rectangular and hexagonal patterning in free surfaces have been estimated around 2.25 and 3.39 times of that of the LED structure with smooth free surface (i.e., without any patterning), respectively.

AB - Light extraction of InGaN/GaN based surface-patterned vertical blue light emitting diodes (LEDs) is investigated by the use of ray-tracing approach. To optimize the light extraction efficiency of LEDs, various types of facet-patterning have been introduced on the free surfaces of the n-GaN epitaxial layer. A drastic increase in light extraction efficiency of the LED is observed due to increase of random and multiple scattering of light through patterned surfaces. The improvement in overall light extraction efficiency for the LEDs having rectangular and hexagonal patterning in free surfaces have been estimated around 2.25 and 3.39 times of that of the LED structure with smooth free surface (i.e., without any patterning), respectively.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0030402615006385

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DO - 10.1016/j.ijleo.2015.07.086

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JO - Optik

JF - Optik

IS - 21

ER -

Enhancement of light extraction efficiency in InGaN/GaN vertical blue light emitting diodes by surface patterning: Design and simulation

Abstract

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