Enhancement of the far-field output power and the properties of the very-small-aperture lasers

Q. Gan; G. Song; Y. Xu; G. Yang; Y. Li; Q. Cao; W. Ma; J. Gao; L. Chen

doi:10.1007/s00340-005-1908-0

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

Q. Gan, G. Song, Y. Xu, G. Yang, Y. Li, Q. Cao, W. Ma, J. Gao, L. Chen

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.

Original language	English (US)
Pages (from-to)	503-506
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	81
Issue number	4
DOIs	https://doi.org/10.1007/s00340-005-1908-0
State	Published - Aug 1 2005
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physics and Astronomy (miscellaneous)

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10.1007/s00340-005-1908-0

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abstract = "We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. {\textcopyright} Springer-Verlag 2005.",

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T1 - Enhancement of the far-field output power and the properties of the very-small-aperture lasers

AU - Gan, Q.

AU - Song, G.

AU - Xu, Y.

AU - Yang, G.

AU - Li, Y.

AU - Cao, Q.

AU - Ma, W.

AU - Gao, J.

AU - Chen, L.

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2005/8/1

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N2 - We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.

AB - We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.

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M3 - Article

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JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 4

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Enhancement of the far-field output power and the properties of the very-small-aperture lasers

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