TY - GEN
T1 - Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB
AU - Huang, Puyang
AU - Chen, Aitian
AU - Cai, Xinyu
AU - Wu, Di
AU - Zhang, Xi Xiang
AU - Kou, Xufeng
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Voltage-controlled magnetic anisotropy (VCMA) is crucial for advancing high-speed, low-power magnetoresistive random-access memory (MRAM). Here, we report the optimization of the VCMA coefficient in an orthogonally-magnetized CoFeB/MgO(t)/CoFeB structure. By optimizing the MgO thickness, the VCMA value reaches 53 fJ/V · m in the t=2.6 nm sample, which has a 108.7% enhancement compared to the t=2 nm counterpart. Moreover, by analyzing the MTJ capacitance with equivalent MTJ circuit model, we demonstrate that the improved VCMA coefficient is mainly attributed to the enlarged interfacial capacitance. Therefore, our work not only reveal the profound influence of barrier thickness on VCMA but also provide insights for the design of future VCMA-MRAM.
AB - Voltage-controlled magnetic anisotropy (VCMA) is crucial for advancing high-speed, low-power magnetoresistive random-access memory (MRAM). Here, we report the optimization of the VCMA coefficient in an orthogonally-magnetized CoFeB/MgO(t)/CoFeB structure. By optimizing the MgO thickness, the VCMA value reaches 53 fJ/V · m in the t=2.6 nm sample, which has a 108.7% enhancement compared to the t=2 nm counterpart. Moreover, by analyzing the MTJ capacitance with equivalent MTJ circuit model, we demonstrate that the improved VCMA coefficient is mainly attributed to the enlarged interfacial capacitance. Therefore, our work not only reveal the profound influence of barrier thickness on VCMA but also provide insights for the design of future VCMA-MRAM.
KW - Magnetic tunneling junction
KW - Negative interfacial capacitance
KW - Voltage-controlled magnetic anisotropy effect
UR - http://www.scopus.com/inward/record.url?scp=85198996344&partnerID=8YFLogxK
U2 - 10.1109/INTERMAGShortPapers61879.2024.10576853
DO - 10.1109/INTERMAGShortPapers61879.2024.10576853
M3 - Conference contribution
AN - SCOPUS:85198996344
T3 - 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings
BT - 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024
Y2 - 5 May 2024 through 10 May 2024
ER -