@inproceedings{49eb153d14ad4559be6e15804fc10042,
title = "Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer",
abstract = "The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.",
keywords = "Dilute nitrides, GaNAs, Semiconducting III-V materials, Semiconductor laser, quantum wells",
author = "Mitani, {Sufian M.} and Alias, {Mohd S.} and Manaf, {Azlian A.} and Exhan, {Farha M.}",
year = "2011",
doi = "10.1109/RSM.2011.6088369",
language = "English (US)",
isbn = "9781612848464",
series = "2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts",
pages = "396--399",
booktitle = "2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts",
note = "2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 ; Conference date: 28-09-2011 Through 30-09-2011",
}