Abstract
The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.
Original language | English (US) |
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Title of host publication | 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts |
Pages | 396-399 |
Number of pages | 4 |
DOIs | |
State | Published - 2011 |
Externally published | Yes |
Event | 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia Duration: Sep 28 2011 → Sep 30 2011 |
Other
Other | 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 |
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Country/Territory | Malaysia |
City | Kota Kinabalu, Sabah |
Period | 09/28/11 → 09/30/11 |
Keywords
- Dilute nitrides
- GaNAs
- quantum wells
- Semiconducting III-V materials
- Semiconductor laser
ASJC Scopus subject areas
- Electrical and Electronic Engineering