Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

Sufian M. Mitani; Mohd S. Alias; Azlian A. Manaf; Farha M. Exhan

doi:10.1109/RSM.2011.6088369

Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

Sufian M. Mitani^*, Mohd S. Alias, Azlian A. Manaf, Farha M. Exhan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.

Original language	English (US)
Title of host publication	2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages	396-399
Number of pages	4
DOIs	https://doi.org/10.1109/RSM.2011.6088369
State	Published - 2011
Externally published	Yes
Event	2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia Duration: Sep 28 2011 → Sep 30 2011

Other

Other	2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
Country/Territory	Malaysia
City	Kota Kinabalu, Sabah
Period	09/28/11 → 09/30/11

Keywords

Dilute nitrides
GaNAs
quantum wells
Semiconducting III-V materials
Semiconductor laser

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/RSM.2011.6088369

Cite this

@inproceedings{49eb153d14ad4559be6e15804fc10042,

title = "Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer",

abstract = "The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.",

keywords = "Dilute nitrides, GaNAs, quantum wells, Semiconducting III-V materials, Semiconductor laser",

author = "Mitani, {Sufian M.} and Alias, {Mohd S.} and Manaf, {Azlian A.} and Exhan, {Farha M.}",

year = "2011",

doi = "10.1109/RSM.2011.6088369",

language = "English (US)",

isbn = "9781612848464",

pages = "396--399",

booktitle = "2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts",

note = "2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 ; Conference date: 28-09-2011 Through 30-09-2011",

}

Mitani, SM, Alias, MS, Manaf, AA & Exhan, FM 2011, Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088369, pp. 396-399, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, Malaysia, 09/28/11. https://doi.org/10.1109/RSM.2011.6088369

Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer. / Mitani, Sufian M.; Alias, Mohd S.; Manaf, Azlian A. et al.
2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 396-399 6088369.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

AU - Mitani, Sufian M.

AU - Alias, Mohd S.

AU - Manaf, Azlian A.

AU - Exhan, Farha M.

PY - 2011

Y1 - 2011

N2 - The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.

AB - The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.

KW - Dilute nitrides

KW - GaNAs

KW - quantum wells

KW - Semiconducting III-V materials

KW - Semiconductor laser

UR - http://www.scopus.com/inward/record.url?scp=83755228591&partnerID=8YFLogxK

U2 - 10.1109/RSM.2011.6088369

DO - 10.1109/RSM.2011.6088369

M3 - Conference contribution

AN - SCOPUS:83755228591

SN - 9781612848464

SP - 396

EP - 399

BT - 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

T2 - 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011

Y2 - 28 September 2011 through 30 September 2011

ER -

Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this