TY - JOUR
T1 - Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer
AU - Cao, Sheng
AU - Zheng, Jinju
AU - Zhao, Jialong
AU - Yang, Zuobao
AU - Li, Chengming
AU - Guan, Xinwei
AU - Yang, Weiyou
AU - Shang, Minghui
AU - Wu, Tao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was financially supported by the National Natural Science Foundation of China (NSFC, Grant No. 61106066), Zhejiang Provincial Science Foundation (Grant No. LY14F040001), Foundation of Educational Commission in Zhejiang Province of China (Grant No. Y201533502), and Natural Science Foundation of Ningbo Municipal Government (Grant Nos. 2016A610104 and 2016A610108).
PY - 2017/5
Y1 - 2017/5
N2 - Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.
AB - Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.
UR - http://hdl.handle.net/10754/623398
UR - http://pubs.acs.org/doi/abs/10.1021/acsami.7b03262
UR - http://www.scopus.com/inward/record.url?scp=85019266065&partnerID=8YFLogxK
U2 - 10.1021/acsami.7b03262
DO - 10.1021/acsami.7b03262
M3 - Article
C2 - 28421740
SN - 1944-8244
VL - 9
SP - 15605
EP - 15614
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
IS - 18
ER -