Epitaxial growth of ferromagnetic Co:TiO2 thin films by co-sputtering

G. C. Han; Y. H. Wu; M. Tay; K. B. Li; Z. B. Guo; T. C. Chong

doi:10.1016/S0304-8853(03)00492-X

Epitaxial growth of ferromagnetic Co:TiO₂ thin films by co-sputtering

G. C. Han^*, Y. H. Wu, M. Tay, K. B. Li, Z. B. Guo, T. C. Chong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Epitaxial anatase Co:TiO₂ thin films were grown on LaAlO ₃ (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500 °C to 750 °C. magnetization measurements show that the saturation magnetization (M_s) increases as deposition temperature increases. At 750 °C, M_s is about 1.13 μ_B/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13 °. It was found that M_s is directly related with the crystallinity, i.e., M_s increases as the crystallinity of samples improves.

Original language	English (US)
Pages (from-to)	159-164
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	268
Issue number	1-2
DOIs	https://doi.org/10.1016/S0304-8853(03)00492-X
State	Published - Jan 2004
Externally published	Yes

Keywords

Epitaxial growth
Magnetism
Semiconductors
Sputtering
Titanium oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/S0304-8853(03)00492-X

Cite this

@article{62566ee0abeb49ad8e523482ffd6ecaf,

title = "Epitaxial growth of ferromagnetic Co:TiO2 thin films by co-sputtering",

abstract = "Epitaxial anatase Co:TiO2 thin films were grown on LaAlO 3 (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500 °C to 750 °C. magnetization measurements show that the saturation magnetization (Ms) increases as deposition temperature increases. At 750 °C, Ms is about 1.13 μB/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13 °. It was found that Ms is directly related with the crystallinity, i.e., Ms increases as the crystallinity of samples improves.",

keywords = "Epitaxial growth, Magnetism, Semiconductors, Sputtering, Titanium oxide",

author = "Han, {G. C.} and Wu, {Y. H.} and M. Tay and Li, {K. B.} and Guo, {Z. B.} and Chong, {T. C.}",

year = "2004",

month = jan,

doi = "10.1016/S0304-8853(03)00492-X",

language = "English (US)",

volume = "268",

pages = "159--164",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Epitaxial growth of ferromagnetic Co:TiO2 thin films by co-sputtering

AU - Han, G. C.

AU - Wu, Y. H.

AU - Tay, M.

AU - Li, K. B.

AU - Guo, Z. B.

AU - Chong, T. C.

PY - 2004/1

Y1 - 2004/1

N2 - Epitaxial anatase Co:TiO2 thin films were grown on LaAlO 3 (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500 °C to 750 °C. magnetization measurements show that the saturation magnetization (Ms) increases as deposition temperature increases. At 750 °C, Ms is about 1.13 μB/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13 °. It was found that Ms is directly related with the crystallinity, i.e., Ms increases as the crystallinity of samples improves.

AB - Epitaxial anatase Co:TiO2 thin films were grown on LaAlO 3 (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500 °C to 750 °C. magnetization measurements show that the saturation magnetization (Ms) increases as deposition temperature increases. At 750 °C, Ms is about 1.13 μB/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13 °. It was found that Ms is directly related with the crystallinity, i.e., Ms increases as the crystallinity of samples improves.

KW - Epitaxial growth

KW - Magnetism

KW - Semiconductors

KW - Sputtering

KW - Titanium oxide

UR - http://www.scopus.com/inward/record.url?scp=0242335684&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(03)00492-X

DO - 10.1016/S0304-8853(03)00492-X

M3 - Article

AN - SCOPUS:0242335684

SN - 0304-8853

VL - 268

SP - 159

EP - 164

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-2

ER -