@inproceedings{e857a233582649feaed8409673b64d34,
title = "Epitaxial growth of high quality inas/ingaalas quantum dash-in-well structure on INP",
abstract = "We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial growth control of InAs/InGaAlAs/InP system for optical device applications.",
keywords = "Dash-in-well, Epitaxial growth, InP, Quantum dash",
author = "Y. Wang and Djie, {H. S.} and V. Hongpinyo and Tan, {C. L.} and Ooi, {B. S.} and Hwang, {J. C.M.} and Fang, {x. M.} and Y. Wu and Fastenau, {J. M.} and Liu, {W. K.} and Dang, {G. T.} and Chang, {W. H.}",
year = "2008",
doi = "10.1109/ICIPRM.2008.4702939",
language = "English (US)",
isbn = "9781424422593",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
booktitle = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008",
note = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 ; Conference date: 25-05-2008 Through 29-05-2008",
}