TY - JOUR
T1 - Epitaxial growth of large-grain-size ferromagnetic monolayer CrI$_{3}$ for valley Zeeman splitting enhancement.
AU - Gong, Lipeng
AU - Zhang, Cheng
AU - Nie, Anmin
AU - Lin, Changqing
AU - Zhang, Hao
AU - Gao, Chaofeng
AU - Wang, Meng
AU - Zhang, Xi
AU - Han, Nannan
AU - Su, Huimin
AU - Lin, Chen
AU - Jin, Yizheng
AU - Zhang, Chenhui
AU - Zhang, Xixiang
AU - Dai, Jun-Feng
AU - Cheng, Yingchun
AU - Huang, Wei
N1 - KAUST Repository Item: Exported on 2021-02-01
Acknowledged KAUST grant number(s): OSR-2018-CRG7-3717
Acknowledgements: Y. C. acknowledges the support from the National Natural Science Foundation of China (91833302) and the Fundamental Research Funds for the Central Universities. J. F. acknowledges the support from the National Natural Science Foundation of China (11974159). H. M. acknowledges the support from the National Natural Science Foundation of China (11604139). W. H. acknowledges the support from the National Natural Science Foundation of China (61935017) and Projects of International Cooperation and Exchanges NSFC (51811530018). N. N. H. acknowledges the support from the National Natural Science Foundation of China (11904288). C. H. Z and X. X. Z. acknowledges the support from King Abdullah University of Science & Technology (KAUST) under award numbers OSR-2018-CRG7-3717. For computer time, this research used the resources of the Supercomputing Laboratory at King Abdullah University of Science & Technology (KAUST) in Thuwal, Saudi Arabia.
PY - 2021/1/28
Y1 - 2021/1/28
N2 - Two-dimensional (2D) magnetic CrI3 has received considerable research attention because of its intrinsic features, including insulation, Ising ferromagnetism, and stacking-order-dependent magnetism, as well as potential in spintronic applications. However, the current strategy for the production of ambient-unstable CrI3 thin layer is limited to mechanical exfoliation, which normally suffers from uncontrollable layer thickness, small size, and low yet unpredictable yield. Here, via a confined vapor epitaxy (CVE) method, we demonstrate the mass production of flower-like CrI3 monolayers on mica. Interestingly, we discovered the crucial role of K ions on the mica surface in determining the morphology of monolayer CrI3, reacting with precursors to form a KIx buffer layer. Meanwhile, the transport agent affects the thickness and size of the as-grown CrI3. Moreover, the Curie temperature of CrI3 is greatly affected by the interaction between CrI3 and the substrate. The monolayer CrI3 on mica could act as a magnetic substrate for valley Zeeman splitting enhancement of WSe2. We reckon our work represents a major advancement in the mass production of monolayer 2D CrI3 and anticipate that our growth strategy may be extended to other transition metal halides.
AB - Two-dimensional (2D) magnetic CrI3 has received considerable research attention because of its intrinsic features, including insulation, Ising ferromagnetism, and stacking-order-dependent magnetism, as well as potential in spintronic applications. However, the current strategy for the production of ambient-unstable CrI3 thin layer is limited to mechanical exfoliation, which normally suffers from uncontrollable layer thickness, small size, and low yet unpredictable yield. Here, via a confined vapor epitaxy (CVE) method, we demonstrate the mass production of flower-like CrI3 monolayers on mica. Interestingly, we discovered the crucial role of K ions on the mica surface in determining the morphology of monolayer CrI3, reacting with precursors to form a KIx buffer layer. Meanwhile, the transport agent affects the thickness and size of the as-grown CrI3. Moreover, the Curie temperature of CrI3 is greatly affected by the interaction between CrI3 and the substrate. The monolayer CrI3 on mica could act as a magnetic substrate for valley Zeeman splitting enhancement of WSe2. We reckon our work represents a major advancement in the mass production of monolayer 2D CrI3 and anticipate that our growth strategy may be extended to other transition metal halides.
UR - http://hdl.handle.net/10754/667113
UR - http://xlink.rsc.org/?DOI=D0NR08248A
U2 - 10.1039/d0nr08248a
DO - 10.1039/d0nr08248a
M3 - Article
C2 - 33506851
SN - 2040-3364
JO - Nanoscale
JF - Nanoscale
ER -