Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

T. Kawashima; T. Nagai; D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1016/j.jcrysgro.2006.10.096

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al0.18Ga0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements. © 2006 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	261-264
Number of pages	4
Journal	Journal of Crystal Growth
Volume	298
Issue number	SPEC. ISS
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.096
State	Published - Jan 1 2007
Externally published	Yes

ASJC Scopus subject areas

Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics

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10.1016/j.jcrysgro.2006.10.096

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@article{2cd404054170416fbf47b3db2834c9c3,

title = "Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates",

abstract = "We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al0.18Ga0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements. {\textcopyright} 2006 Elsevier B.V. All rights reserved.",

author = "T. Kawashima and T. Nagai and D. Iida and A. Miura and Y. Okadome and Y. Tsuchiya and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2007",

month = jan,

day = "1",

doi = "10.1016/j.jcrysgro.2006.10.096",

language = "English (US)",

volume = "298",

pages = "261--264",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS",

}

TY - JOUR

T1 - Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

AU - Kawashima, T.

AU - Nagai, T.

AU - Iida, D.

AU - Miura, A.

AU - Okadome, Y.

AU - Tsuchiya, Y.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al0.18Ga0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements. © 2006 Elsevier B.V. All rights reserved.

AB - We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al0.18Ga0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements. © 2006 Elsevier B.V. All rights reserved.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024806009808

UR - http://www.scopus.com/inward/record.url?scp=33846548135&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.10.096

DO - 10.1016/j.jcrysgro.2006.10.096

M3 - Article

SN - 0022-0248

VL - 298

SP - 261

EP - 264

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS

ER -

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Abstract

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