TY - GEN
T1 - Equivalent circuit model for the electron transport in 2D resistive switching material systems
AU - Miranda, E.
AU - Sune, J.
AU - Pan, C.
AU - Villena, M.
AU - Xiao, N.
AU - Lanza, M.
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2017/10/12
Y1 - 2017/10/12
N2 - A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the parallel contribution of partially and fully formed localized current pathways spanning the two-dimensional (2D) film characterized by transmission coefficients T
AB - A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the parallel contribution of partially and fully formed localized current pathways spanning the two-dimensional (2D) film characterized by transmission coefficients T
UR - http://ieeexplore.ieee.org/document/8066598/
UR - http://www.scopus.com/inward/record.url?scp=85033434231&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2017.8066598
DO - 10.1109/ESSDERC.2017.8066598
M3 - Conference contribution
SN - 9781509059782
SP - 86
EP - 89
BT - European Solid-State Device Research Conference
PB - Editions [email protected]
ER -