Erratum: Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress (Applied Physics Letters (2011) 99 (103510))

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafra, X. Aymerich, G. Benstetter, Z. Y. Shen, G. Bersuker

Research output: Contribution to journalArticlepeer-review

Original languageEnglish (US)
JournalApplied Physics Letters
Issue number23
StatePublished - Dec 5 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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