Erratum: Epitaxial growth of β-Ga2O3(−201) thin film on four-fold symmetry CeO2(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)

Xiao Tang*, Kuang Hui Li, Che Hao Liao, Dongxing Zheng, Chen Liu, Rongyu Lin, Na Xiao, Shibin Krishna, Jose Tauboada, Xiaohang Li

*Corresponding author for this work

Research output: Contribution to journalComment/debatepeer-review

1 Scopus citations

Abstract

The authors regret the omission of the email address for the co-corresponding author, Xiaohang Li, from the original published article. Their email address is Xiaohang.li@kaust.edu.sa, and the corrected author affiliation details are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original languageEnglish (US)
Pages (from-to)17542
Number of pages1
JournalJOURNAL OF MATERIALS CHEMISTRY C
Volume9
Issue number48
DOIs
StatePublished - Dec 28 2021

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

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