Erratum: Epitaxial growth of β-Ga2O3(−201) thin film on four-fold symmetry CeO2(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)

Xiao Tang; Kuang Hui Li; Che Hao Liao; Dongxing Zheng; Chen Liu; Rongyu Lin; Na Xiao; Shibin Krishna; Jose Tauboada; Xiaohang Li

doi:10.1039/d1tc90261j

Erratum: Epitaxial growth of β-Ga₂O₃(−201) thin film on four-fold symmetry CeO₂(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)

Xiao Tang^*, Kuang Hui Li, Che Hao Liao, Dongxing Zheng, Chen Liu, Rongyu Lin, Na Xiao, Shibin Krishna, Jose Tauboada, Xiaohang Li

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate › peer-review

1 Scopus citations

Abstract

The authors regret the omission of the email address for the co-corresponding author, Xiaohang Li, from the original published article. Their email address is [email protected], and the corrected author affiliation details are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original language	English (US)
Pages (from-to)	17542
Number of pages	1
Journal	JOURNAL OF MATERIALS CHEMISTRY C
Volume	9
Issue number	48
DOIs	https://doi.org/10.1039/d1tc90261j
State	Published - Dec 28 2021

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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10.1039/d1tc90261j

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Tang, X., Li, K. H., Liao, C. H., Zheng, D., Liu, C., Lin, R., Xiao, N., Krishna, S., Tauboada, J., & Li, X. (2021). Erratum: Epitaxial growth of β-Ga₂O₃(−201) thin film on four-fold symmetry CeO₂(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A). JOURNAL OF MATERIALS CHEMISTRY C, 9(48), 17542. https://doi.org/10.1039/d1tc90261j

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title = "Erratum: Epitaxial growth of β-Ga2O3(−201) thin film on four-fold symmetry CeO2(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)",

abstract = "The authors regret the omission of the email address for the co-corresponding author, Xiaohang Li, from the original published article. Their email address is [email protected], and the corrected author affiliation details are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.",

author = "Xiao Tang and Li, {Kuang Hui} and Liao, {Che Hao} and Dongxing Zheng and Chen Liu and Rongyu Lin and Na Xiao and Shibin Krishna and Jose Tauboada and Xiaohang Li",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2021.",

year = "2021",

month = dec,

day = "28",

doi = "10.1039/d1tc90261j",

language = "English (US)",

volume = "9",

pages = "17542",

journal = "JOURNAL OF MATERIALS CHEMISTRY C",

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publisher = "Royal Society of Chemistry",

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}

Tang, X, Li, KH, Liao, CH, Zheng, D, Liu, C, Lin, R, Xiao, N, Krishna, S, Tauboada, J & Li, X 2021, 'Erratum: Epitaxial growth of β-Ga₂O₃(−201) thin film on four-fold symmetry CeO₂(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)', JOURNAL OF MATERIALS CHEMISTRY C, vol. 9, no. 48, pp. 17542. https://doi.org/10.1039/d1tc90261j

Erratum: Epitaxial growth of β-Ga₂O₃(−201) thin film on four-fold symmetry CeO₂(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A). / Tang, Xiao; Li, Kuang Hui; Liao, Che Hao et al.
In: JOURNAL OF MATERIALS CHEMISTRY C, Vol. 9, No. 48, 28.12.2021, p. 17542.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Epitaxial growth of β-Ga2O3(−201) thin film on four-fold symmetry CeO2(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)

AU - Tang, Xiao

AU - Li, Kuang Hui

AU - Liao, Che Hao

AU - Zheng, Dongxing

AU - Liu, Chen

AU - Lin, Rongyu

AU - Xiao, Na

AU - Krishna, Shibin

AU - Tauboada, Jose

AU - Li, Xiaohang

PY - 2021/12/28

Y1 - 2021/12/28

N2 - The authors regret the omission of the email address for the co-corresponding author, Xiaohang Li, from the original published article. Their email address is [email protected], and the corrected author affiliation details are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

AB - The authors regret the omission of the email address for the co-corresponding author, Xiaohang Li, from the original published article. Their email address is [email protected], and the corrected author affiliation details are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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U2 - 10.1039/d1tc90261j

DO - 10.1039/d1tc90261j

M3 - Comment/debate

AN - SCOPUS:85121735174

SN - 2050-7534

VL - 9

SP - 17542

JO - JOURNAL OF MATERIALS CHEMISTRY C

JF - JOURNAL OF MATERIALS CHEMISTRY C

IS - 48

ER -

Erratum: Epitaxial growth of β-Ga₂O₃(−201) thin film on four-fold symmetry CeO₂(001) substrate for heterogeneous integrations (J. Mater. Chem. C, (2021) 9 (15868-15876) DOI: 10.1039/D1TC02852A)

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