Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

Pradipta K. Nayak*, M. N. Hedhili, Dongkyu Cha, H. N. Alshareef

*Corresponding author for this work

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish (US)
Article number249902
JournalApplied Physics Letters
Issue number24
StatePublished - Dec 15 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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