Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

Pradipta Nayak; Mohamed Nejib Hedhili; Dong Kyu Cha; Husam Niman Alshareef

doi:10.1063/1.4902402

Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

Pradipta Nayak^*, Mohamed Nejib Hedhili, Dong Kyu Cha, Husam Niman Alshareef

^*Corresponding author for this work

Research output: Contribution to journal › Article

Original language	English (US)
Article number	249902
Journal	Applied Physics Letters
Volume	105
Issue number	24
DOIs	https://doi.org/10.1063/1.4902402
State	Published - Dec 15 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4902402

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author = "Pradipta Nayak and Hedhili, {Mohamed Nejib} and Cha, {Dong Kyu} and Alshareef, {Husam Niman}",

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AU - Hedhili, Mohamed Nejib

AU - Cha, Dong Kyu

AU - Alshareef, Husam Niman

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Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

ASJC Scopus subject areas

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