Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)

Yen Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan, Thomas D. Anthopoulos

Research output: Contribution to journalComment/debatepeer-review

3 Scopus citations
Original languageEnglish (US)
Pages (from-to)4689
Number of pages1
JournalAdvanced Materials
Issue number34
StatePublished - Sep 14 2013

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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