Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

P. Majhi; H. C. Wen; H. Alshareef; K. Choi; R. Harris; P. Lysaght; H. Luan; Y. Senzaki; S. C. Song; B. H. Lee; C. Ramiller

doi:10.1109/icicdt.2005.1502594

Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

P. Majhi^*, H. C. Wen, H. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S. C. Song, B. H. Lee, C. Ramiller

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Scopus citations

Abstract

An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the highk-metal gate stacks are discussed.

Original language	English (US)
Title of host publication	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	69-72
Number of pages	4
ISBN (Print)	0780390814, 9780780390812
DOIs	https://doi.org/10.1109/icicdt.2005.1502594
State	Published - 2005
Externally published	Yes
Event	2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States Duration: May 9 2005 → May 11 2005

Publication series

Name	2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Country/Territory	United States
City	Austin, TX
Period	05/9/05 → 05/11/05

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/icicdt.2005.1502594

Cite this

Majhi, P., Wen, H. C., Alshareef, H., Choi, K., Harris, R., Lysaght, P., Luan, H., Senzaki, Y., Song, S. C., Lee, B. H., & Ramiller, C. (2005). Evaluation and integration of metal gate electrodes for future generation dual metal CMOS. In 2005 International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 69-72). Article D1 (2005 International Conference on Integrated Circuit Design and Technology, ICICDT). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/icicdt.2005.1502594

Majhi, P. ; Wen, H. C. ; Alshareef, H. et al. / Evaluation and integration of metal gate electrodes for future generation dual metal CMOS. 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 69-72 (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).

@inproceedings{8313b3c0ed6643c8831557cc840debdc,

title = "Evaluation and integration of metal gate electrodes for future generation dual metal CMOS",

abstract = "An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the highk-metal gate stacks are discussed.",

author = "P. Majhi and Wen, {H. C.} and H. Alshareef and K. Choi and R. Harris and P. Lysaght and H. Luan and Y. Senzaki and Song, {S. C.} and Lee, {B. H.} and C. Ramiller",

year = "2005",

doi = "10.1109/icicdt.2005.1502594",

language = "English (US)",

isbn = "0780390814",

series = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "69--72",

booktitle = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT",

address = "United States",

note = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT ; Conference date: 09-05-2005 Through 11-05-2005",

}

Majhi, P, Wen, HC, Alshareef, H, Choi, K, Harris, R, Lysaght, P, Luan, H, Senzaki, Y, Song, SC, Lee, BH & Ramiller, C 2005, Evaluation and integration of metal gate electrodes for future generation dual metal CMOS. in 2005 International Conference on Integrated Circuit Design and Technology, ICICDT., D1, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, Institute of Electrical and Electronics Engineers Inc., pp. 69-72, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, Austin, TX, United States, 05/9/05. https://doi.org/10.1109/icicdt.2005.1502594

Evaluation and integration of metal gate electrodes for future generation dual metal CMOS. / Majhi, P.; Wen, H. C.; Alshareef, H. et al.
2005 International Conference on Integrated Circuit Design and Technology, ICICDT. Institute of Electrical and Electronics Engineers Inc., 2005. p. 69-72 D1 (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

AU - Majhi, P.

AU - Wen, H. C.

AU - Alshareef, H.

AU - Choi, K.

AU - Harris, R.

AU - Lysaght, P.

AU - Luan, H.

AU - Senzaki, Y.

AU - Song, S. C.

AU - Lee, B. H.

AU - Ramiller, C.

PY - 2005

Y1 - 2005

N2 - An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the highk-metal gate stacks are discussed.

AB - An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the highk-metal gate stacks are discussed.

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U2 - 10.1109/icicdt.2005.1502594

DO - 10.1109/icicdt.2005.1502594

M3 - Conference contribution

AN - SCOPUS:25844437110

SN - 0780390814

SN - 9780780390812

T3 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

SP - 69

EP - 72

BT - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Y2 - 9 May 2005 through 11 May 2005

ER -

Majhi P, Wen HC, Alshareef H, Choi K, Harris R, Lysaght P et al. Evaluation and integration of metal gate electrodes for future generation dual metal CMOS. In 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. Institute of Electrical and Electronics Engineers Inc. 2005. p. 69-72. D1. (2005 International Conference on Integrated Circuit Design and Technology, ICICDT). doi: 10.1109/icicdt.2005.1502594

Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

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