Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

H. Luan; H. N. Alshareef; H. R. Harris; H. C. Wen; K. Choi; Y. Senzaki; P. Majhi; B. H. Lee

doi:10.1063/1.2188380

Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

H. Luan^*, H. N. Alshareef, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi, B. H. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28- 4.74 eV on SiO2, 4.40- 4.79 eV on HfO2, and 4.44- 4.83 eV on HfSiOx. For high- k dielectrics, the work function can be tuned by 200 meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87 eV while Si implantation increases it to 4.93 eV, making TiSiN a good p -type metal candidate.

Original language	English (US)
Article number	142113
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2188380
State	Published - Apr 3 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor",

abstract = "The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28- 4.74 eV on SiO2, 4.40- 4.79 eV on HfO2, and 4.44- 4.83 eV on HfSiOx. For high- k dielectrics, the work function can be tuned by 200 meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87 eV while Si implantation increases it to 4.93 eV, making TiSiN a good p -type metal candidate.",

author = "H. Luan and Alshareef, {H. N.} and Harris, {H. R.} and Wen, {H. C.} and K. Choi and Y. Senzaki and P. Majhi and Lee, {B. H.}",

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T1 - Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

AU - Luan, H.

AU - Alshareef, H. N.

AU - Harris, H. R.

AU - Wen, H. C.

AU - Choi, K.

AU - Senzaki, Y.

AU - Majhi, P.

AU - Lee, B. H.

PY - 2006/4/3

Y1 - 2006/4/3

N2 - The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28- 4.74 eV on SiO2, 4.40- 4.79 eV on HfO2, and 4.44- 4.83 eV on HfSiOx. For high- k dielectrics, the work function can be tuned by 200 meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87 eV while Si implantation increases it to 4.93 eV, making TiSiN a good p -type metal candidate.

AB - The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28- 4.74 eV on SiO2, 4.40- 4.79 eV on HfO2, and 4.44- 4.83 eV on HfSiOx. For high- k dielectrics, the work function can be tuned by 200 meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87 eV while Si implantation increases it to 4.93 eV, making TiSiN a good p -type metal candidate.

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U2 - 10.1063/1.2188380

DO - 10.1063/1.2188380

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Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

Abstract

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