Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

B. Y. Zhang; B. Yao; Y. F. Li; A. M. Liu; Z. Z. Zhang; B. H. Li; G. Z. Xing; T. Wu; X. B. Qin; D. X. Zhao; C. X. Shan; D. Z. Shen

doi:10.1063/1.3657412

Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

B. Y. Zhang^*, B. Yao, Y. F. Li, A. M. Liu, Z. Z. Zhang, B. H. Li, G. Z. Xing, T. Wu, X. B. Qin, D. X. Zhao, C. X. Shan, D. Z. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V _Zn, such as V_Zn and Li_i-N_O-V _Zn complex, well supported by first-principles calculations. The incorporation of N_O can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Li_i to form Li_i-N_O complex, which restrains the compensation of Li_i for V_Zn and makes the ZnO:(Li, N) conduct in p-type.

Original language	English (US)
Article number	182503
Journal	Applied Physics Letters
Volume	99
Issue number	18
DOIs	https://doi.org/10.1063/1.3657412
State	Published - Oct 31 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3657412

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@article{1069ecb8bc624a1f9134c8093e8a3c1a,

title = "Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films",

abstract = "Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V Zn, such as VZn and Lii-NO-V Zn complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Lii to form Lii-NO complex, which restrains the compensation of Lii for VZn and makes the ZnO:(Li, N) conduct in p-type.",

author = "Zhang, {B. Y.} and B. Yao and Li, {Y. F.} and Liu, {A. M.} and Zhang, {Z. Z.} and Li, {B. H.} and Xing, {G. Z.} and T. Wu and Qin, {X. B.} and Zhao, {D. X.} and Shan, {C. X.} and Shen, {D. Z.}",

year = "2011",

month = oct,

day = "31",

doi = "10.1063/1.3657412",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "18",

}

TY - JOUR

T1 - Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

AU - Zhang, B. Y.

AU - Yao, B.

AU - Li, Y. F.

AU - Liu, A. M.

AU - Zhang, Z. Z.

AU - Li, B. H.

AU - Xing, G. Z.

AU - Wu, T.

AU - Qin, X. B.

AU - Zhao, D. X.

AU - Shan, C. X.

AU - Shen, D. Z.

PY - 2011/10/31

Y1 - 2011/10/31

N2 - Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V Zn, such as VZn and Lii-NO-V Zn complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Lii to form Lii-NO complex, which restrains the compensation of Lii for VZn and makes the ZnO:(Li, N) conduct in p-type.

AB - Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V Zn, such as VZn and Lii-NO-V Zn complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Lii to form Lii-NO complex, which restrains the compensation of Lii for VZn and makes the ZnO:(Li, N) conduct in p-type.

UR - http://www.scopus.com/inward/record.url?scp=80855141612&partnerID=8YFLogxK

U2 - 10.1063/1.3657412

DO - 10.1063/1.3657412

M3 - Article

AN - SCOPUS:80855141612

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182503

ER -

Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

Abstract

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