Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices

Xing Wu; Sen Mei; Michel Bosman; Nagarajan Raghavan; Xixiang Zhang; Dong Kyu Cha; Kun Li; Kin Leong Pey

doi:10.1002/aelm.201500130

Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices

Xing Wu, Sen Mei, Michel Bosman, Nagarajan Raghavan, Xixiang Zhang, Dong Kyu Cha, Kun Li, Kin Leong Pey

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1500130
Journal	Advanced Electronic Materials
Volume	1
Issue number	11
DOIs	https://doi.org/10.1002/aelm.201500130
State	Published - Oct 9 2015

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10.1002/aelm.201500130

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@article{15ad50f4a5454eaca949429b2a72af2b,

title = "Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices",

author = "Xing Wu and Sen Mei and Michel Bosman and Nagarajan Raghavan and Xixiang Zhang and Cha, {Dong Kyu} and Kun Li and Pey, {Kin Leong}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Singapore University of Technology and Design (SUTD)-Zhejiang University (ZJU) Research Collaboration[ZJURP1300104]",

year = "2015",

month = oct,

day = "9",

doi = "10.1002/aelm.201500130",

language = "English (US)",

volume = "1",

pages = "1500130",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley",

number = "11",

}

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T1 - Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices

AU - Wu, Xing

AU - Mei, Sen

AU - Bosman, Michel

AU - Raghavan, Nagarajan

AU - Zhang, Xixiang

AU - Cha, Dong Kyu

AU - Li, Kun

AU - Pey, Kin Leong

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Singapore University of Technology and Design (SUTD)-Zhejiang University (ZJU) Research Collaboration[ZJURP1300104]

PY - 2015/10/9

Y1 - 2015/10/9

UR - http://hdl.handle.net/10754/594305

UR - http://doi.wiley.com/10.1002/aelm.201500130

UR - http://www.scopus.com/inward/record.url?scp=84977107078&partnerID=8YFLogxK

U2 - 10.1002/aelm.201500130

DO - 10.1002/aelm.201500130

M3 - Article

SN - 2199-160X

VL - 1

SP - 1500130

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 11

ER -

Evolution of Filament Formation in Ni/HfO 2 /SiO x /Si-Based RRAM Devices

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