Evolution of InAs nanostructures grown by droplet epitaxy

C. Zhao; Y. H. Chen; B. Xu; P. Jin; Z. G. Wang

doi:10.1063/1.2757151

Evolution of InAs nanostructures grown by droplet epitaxy

C. Zhao^*, Y. H. Chen, B. Xu, P. Jin, Z. G. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings.

Original language	English (US)
Article number	033112
Journal	Applied Physics Letters
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.2757151
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2757151

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title = "Evolution of InAs nanostructures grown by droplet epitaxy",

abstract = "The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings.",

author = "C. Zhao and Chen, {Y. H.} and B. Xu and P. Jin and Wang, {Z. G.}",

year = "2007",

doi = "10.1063/1.2757151",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

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T1 - Evolution of InAs nanostructures grown by droplet epitaxy

AU - Zhao, C.

AU - Chen, Y. H.

AU - Xu, B.

AU - Jin, P.

AU - Wang, Z. G.

PY - 2007

Y1 - 2007

N2 - The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings.

AB - The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings.

UR - http://www.scopus.com/inward/record.url?scp=34547152664&partnerID=8YFLogxK

U2 - 10.1063/1.2757151

DO - 10.1063/1.2757151

M3 - Article

AN - SCOPUS:34547152664

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033112

ER -

Evolution of InAs nanostructures grown by droplet epitaxy

Abstract

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