Evolution of structural order in germanium ion-implanted amorphous silicon layers

S. L. Cheng; H. H. Lin; J. H. He; T. F. Chiang; C. H. Yu; L. J. Chen; C. K. Yang; D. Y. Wu; S. C. Chien; W. C. Chen

doi:10.1063/1.1486256

Evolution of structural order in germanium ion-implanted amorphous silicon layers

S. L. Cheng^*, H. H. Lin, J. H. He, T. F. Chiang, C. H. Yu, L. J. Chen, C. K. Yang, D. Y. Wu, S. C. Chien, W. C. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

Original language	English (US)
Pages (from-to)	910-913
Number of pages	4
Journal	Journal of Applied Physics
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.1486256
State	Published - Jul 15 2002
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Evolution of structural order in germanium ion-implanted amorphous silicon layers",

abstract = "High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.",

author = "Cheng, {S. L.} and Lin, {H. H.} and He, {J. H.} and Chiang, {T. F.} and Yu, {C. H.} and Chen, {L. J.} and Yang, {C. K.} and Wu, {D. Y.} and Chien, {S. C.} and Chen, {W. C.}",

year = "2002",

month = jul,

day = "15",

doi = "10.1063/1.1486256",

language = "English (US)",

volume = "92",

pages = "910--913",

journal = "Journal of Applied Physics",

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T1 - Evolution of structural order in germanium ion-implanted amorphous silicon layers

AU - Cheng, S. L.

AU - Lin, H. H.

AU - He, J. H.

AU - Chiang, T. F.

AU - Yu, C. H.

AU - Chen, L. J.

AU - Yang, C. K.

AU - Wu, D. Y.

AU - Chien, S. C.

AU - Chen, W. C.

PY - 2002/7/15

Y1 - 2002/7/15

N2 - High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

AB - High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

UR - http://www.scopus.com/inward/record.url?scp=0037100991&partnerID=8YFLogxK

U2 - 10.1063/1.1486256

DO - 10.1063/1.1486256

M3 - Article

AN - SCOPUS:0037100991

SN - 0021-8979

VL - 92

SP - 910

EP - 913

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Evolution of structural order in germanium ion-implanted amorphous silicon layers

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