Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn structures

Z. B. Guo; Y. H. Wu; J. J. Qiu; B. Y. Zong; G. C. Han

doi:10.1103/PhysRevB.78.184413

Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn structures

Z. B. Guo, Y. H. Wu, J. J. Qiu, B. Y. Zong, G. C. Han

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.

Original language	English (US)
Article number	184413
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevB.78.184413
State	Published - Nov 14 2008
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.78.184413

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title = "Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn structures",

abstract = "For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.",

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AU - Guo, Z. B.

AU - Wu, Y. H.

AU - Qiu, J. J.

AU - Zong, B. Y.

AU - Han, G. C.

PY - 2008/11/14

Y1 - 2008/11/14

N2 - For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.

AB - For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.

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JF - Physical Review B - Condensed Matter and Materials Physics

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Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn structures

Abstract

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