Exchange bias in patterned FeMn/NiFe bilayers

Z. B. Guo, K. B. Li, G. C. Han, Z. Y. Liu, P. Luo, Y. H. Wu

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Electron beam lithography and ion beam etching have been used to pattern a wire-like array in FeMn/NiFe bilayers. The variation of hysteresis loops with the etching depth in FeMn layer has been presented, and it has been found that with increasing etching depth the coercivity increases and M-H loops show an asymmetric kink. Detailed studies of the magnetic behaviors of the asymmetric kink in the patterned sample with 3.5nm thick FeMn layer have been performed, and a magnetization component perpendicular to the wire direction has been observed.

Original languageEnglish (US)
Pages (from-to)323-326
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number3
StatePublished - Nov 2002
Externally publishedYes


  • Exchange bias
  • Hysteresis loops
  • Lithography
  • Training effects
  • Wire-like array

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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