TY - GEN
T1 - Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device
AU - Chand, Umesh
AU - Berco, Den
AU - Li, Ren
AU - Alawein, Meshal
AU - Fariborzi, Hossein
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2018/9/7
Y1 - 2018/9/7
N2 - In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.
AB - In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.
UR - http://hdl.handle.net/10754/630567
UR - https://ieeexplore.ieee.org/document/8421452
UR - http://www.scopus.com/inward/record.url?scp=85051535340&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2018.8421452
DO - 10.1109/EDTM.2018.8421452
M3 - Conference contribution
AN - SCOPUS:85051535340
SN - 9781538637128
SP - 217
EP - 219
BT - 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -