In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.
|Original language||English (US)|
|Title of host publication||2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||3|
|State||Published - Sep 7 2018|