@inproceedings{aa85734d2bc8495794bb8aa84a2328bb,
title = "Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device",
abstract = "In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.",
keywords = "CBRAM, Poly-Si, reliability, resistive switching",
author = "Umesh Chand and Den Berco and Ren Li and Meshal Alawein and Hossein Fariborzi",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",
year = "2018",
month = jul,
day = "26",
doi = "10.1109/EDTM.2018.8421452",
language = "English (US)",
isbn = "9781538637111",
series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "217--219",
booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
address = "United States",
}