Experimental and theoretical study of multiple cations intermixing in InP-based quantum dot-in-well structure

Yang Wang*, Hery S. Djie, Boon S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We investigated the multiple cations intermixing in InAs/InGaAlAs quantum dot-in-well laser structure grown on InP substrate using impurity-free vacancy disordering (IFVD) technique. Selective control of the bandgap shifts has been achieved using SiO2 and SixNy annealing caps. A differential wavelength shift of 76 nm has been observed after a rapid thermal annealing step at 750 °C for 30 s. In contrast to most IFVD results in other materials, we observed a larger bandgap shift from the SixN y capped samples than from the SiO2 capped samples. Based on theoretical calculations, we attribute this to the different effective interdiffusion rates of group-Ill cations. The demonstrated intermixing process provides an effective method for fine tuning the bandgap of InAs QDs around 1.55 μm as an alternative to the growth manipulation, as well as for realizing photonics integrated circuits.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2006
Externally publishedYes
EventQuantum Dots, Particles, and Nanoclusters III - San Jose, CA, United States
Duration: Jan 23 2006Jan 24 2006


OtherQuantum Dots, Particles, and Nanoclusters III
Country/TerritoryUnited States
CitySan Jose, CA


  • Dots-in-a-well
  • InP
  • Interdiffusion
  • Intermixing
  • Photonic integration
  • Quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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