Abstract
In this paper, the properties and applications of both inorganic and organic modified silica films achieved on InP substrates are discussed based on experimental results. The fabrication of inorganic silica film is done using multiple spin coatings and rapid thermal processing at a temperature of 450°C. The organic modified silica film is made also by multiple-spin coatings with a baking temperature of 200°C. The surface quality, the crack-free critical thickness and the processing conditions of the two kinds of films are compared. The suitable applications for both types of films are discussed, based upon their different properties. From our experiments, we strongly believe that monolithic integration of active and passive devices could be obtained by means of hybridizing sol-gel derived materials and InP based III-V compounds.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 98-103 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3803 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Materials and Devices for Photonic Circuits - Denver, CO, USA Duration: Jul 21 1999 → Jul 22 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering