Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

Hal S. Emmer; Michael G. Deceglie; Zachary C. Holman; Antoine Descoeudres; Stefaan De Wolf; Christophe Ballif; Harry A. Atwater

doi:10.1109/PVSC.2013.6744362

Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

Hal S. Emmer, Michael G. Deceglie, Zachary C. Holman, Antoine Descoeudres, Stefaan De Wolf, Christophe Ballif, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1229-1231
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744362
State	Published - 2013
Externally published	Yes
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	06/16/13 → 06/21/13

Keywords

Heterojunctions
Photovoltaic cells
Silicon

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2013.6744362

Cite this

Emmer, H. S., Deceglie, M. G., Holman, Z. C., Descoeudres, A., De Wolf, S., Ballif, C., & Atwater, H. A. (2013). Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 1229-1231). Article 6744362 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744362

Emmer, Hal S. ; Deceglie, Michael G. ; Holman, Zachary C. et al. / Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1229-1231 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{2a20e22d14c84e6a8f407c80b40227d8,

title = "Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells",

abstract = "We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.",

keywords = "Heterojunctions, Photovoltaic cells, Silicon",

author = "Emmer, {Hal S.} and Deceglie, {Michael G.} and Holman, {Zachary C.} and Antoine Descoeudres and {De Wolf}, Stefaan and Christophe Ballif and Atwater, {Harry A.}",

year = "2013",

doi = "10.1109/PVSC.2013.6744362",

language = "English (US)",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1229--1231",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Emmer, HS, Deceglie, MG, Holman, ZC, Descoeudres, A, De Wolf, S, Ballif, C & Atwater, HA 2013, Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744362, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1229-1231, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 06/16/13. https://doi.org/10.1109/PVSC.2013.6744362

Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. / Emmer, Hal S.; Deceglie, Michael G.; Holman, Zachary C. et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1229-1231 6744362 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

AU - Emmer, Hal S.

AU - Deceglie, Michael G.

AU - Holman, Zachary C.

AU - Descoeudres, Antoine

AU - De Wolf, Stefaan

AU - Ballif, Christophe

AU - Atwater, Harry A.

PY - 2013

Y1 - 2013

N2 - We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.

AB - We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.

KW - Heterojunctions

KW - Photovoltaic cells

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84896478439&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744362

DO - 10.1109/PVSC.2013.6744362

M3 - Conference contribution

AN - SCOPUS:84896478439

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1229

EP - 1231

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Emmer HS, Deceglie MG, Holman ZC, Descoeudres A, De Wolf S, Ballif C et al. Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1229-1231. 6744362. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744362

Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this