TY - JOUR
T1 - Experimental Route to Scanning Probe Hot Electron Nanoscopy (HENs) Applied to 2D Material
AU - Giugni, Andrea
AU - Torre, Bruno
AU - Allione, Marco
AU - Das, Gobind
AU - Wang, Zhenwei
AU - He, Xin
AU - Alshareef, Husam N.
AU - Di Fabrizio, Enzo M.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG3-2014
Acknowledgements: This study was funded by KAUST funding grant from office of competitive research: CRG3-2014, “Multipurpose nano spectroscopies with spatial and temporal control through adiabatic compression and localization of surface plasmon polariton.”
PY - 2017/6/8
Y1 - 2017/6/8
N2 - This paper presents details on a new experimental apparatus implementing the hot electron nanoscopy (HENs) technique introduced for advanced spectroscopies on structure and chemistry in few molecules and interface problems. A detailed description of the architecture used for the laser excitation of surface plasmons at an atomic force microscope (AFM) tip is provided. The photogenerated current from the tip to the sample is detected during the AFM scan. The technique is applied to innovative semiconductors for applications in electronics: 2D MoS2 single crystal and a p-type SnO layer. Results are supported by complementary scanning Kelvin probe microscopy, traditional conductive AFM, and Raman measurements. New features highlighted by HEN technique reveal details of local complexity in MoS2 and polycrystalline structure of SnO at nanometric scale otherwise undetected. The technique set in this paper is promising for future studies in nanojunctions and innovative multilayered materials, with new insight on interfaces.
AB - This paper presents details on a new experimental apparatus implementing the hot electron nanoscopy (HENs) technique introduced for advanced spectroscopies on structure and chemistry in few molecules and interface problems. A detailed description of the architecture used for the laser excitation of surface plasmons at an atomic force microscope (AFM) tip is provided. The photogenerated current from the tip to the sample is detected during the AFM scan. The technique is applied to innovative semiconductors for applications in electronics: 2D MoS2 single crystal and a p-type SnO layer. Results are supported by complementary scanning Kelvin probe microscopy, traditional conductive AFM, and Raman measurements. New features highlighted by HEN technique reveal details of local complexity in MoS2 and polycrystalline structure of SnO at nanometric scale otherwise undetected. The technique set in this paper is promising for future studies in nanojunctions and innovative multilayered materials, with new insight on interfaces.
UR - http://hdl.handle.net/10754/624986
UR - http://onlinelibrary.wiley.com/doi/10.1002/adom.201700195/full
UR - http://www.scopus.com/inward/record.url?scp=85020439163&partnerID=8YFLogxK
U2 - 10.1002/adom.201700195
DO - 10.1002/adom.201700195
M3 - Article
SN - 2195-1071
VL - 5
SP - 1700195
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 15
ER -