Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water

Robert W. Johnstone; Ian G. Foulds; M. Parameswaran

doi:10.1109/CCECE.2007.417

Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water

Robert W. Johnstone, Ian G. Foulds, M. Parameswaran

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Polymethyl methacrylate (PMMA) is a transparent thermoplastic with important applications as a positive resist for various radiation sources. For photo-patterning, PMMA is used with wavelengths shorter than 250nm, as that is the commonly accepted upper limit of effectiveness. However, we have shown patterning of non-amplified PMMA films at 254nm. Data for the etch depth as a function of dose (0 to 10 hours), developer temperature (20°C to 30°C), and etch time was collected. Developer speeds of up several microns a minute are possible, and the selectivity of exposed over unexposed PMMA can reach nearly 650. This demonstrates the feasibility of PMMA exposure using deep UV at 254nm.

Original language	English (US)
Title of host publication	2007 Canadian Conference on Electrical and Computer Engineering, CCECD
Pages	1668-1670
Number of pages	3
DOIs	https://doi.org/10.1109/CCECE.2007.417
State	Published - 2007
Externally published	Yes
Event	2007 Canadian Conference on Electrical and Computer Engineering, CCECD - Vancouver, BC, Canada Duration: Apr 22 2007 → Apr 26 2007

Publication series

Name	Canadian Conference on Electrical and Computer Engineering
ISSN (Print)	0840-7789

Other

Other	2007 Canadian Conference on Electrical and Computer Engineering, CCECD
Country/Territory	Canada
City	Vancouver, BC
Period	04/22/07 → 04/26/07

Keywords

254nm light source
DUV patterning
PMMA
Polymethyl methacrylate

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

Access to Document

10.1109/CCECE.2007.417

Cite this

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title = "Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water",

abstract = "Polymethyl methacrylate (PMMA) is a transparent thermoplastic with important applications as a positive resist for various radiation sources. For photo-patterning, PMMA is used with wavelengths shorter than 250nm, as that is the commonly accepted upper limit of effectiveness. However, we have shown patterning of non-amplified PMMA films at 254nm. Data for the etch depth as a function of dose (0 to 10 hours), developer temperature (20°C to 30°C), and etch time was collected. Developer speeds of up several microns a minute are possible, and the selectivity of exposed over unexposed PMMA can reach nearly 650. This demonstrates the feasibility of PMMA exposure using deep UV at 254nm.",

keywords = "254nm light source, DUV patterning, PMMA, Polymethyl methacrylate",

author = "Johnstone, {Robert W.} and Foulds, {Ian G.} and M. Parameswaran",

year = "2007",

doi = "10.1109/CCECE.2007.417",

language = "English (US)",

isbn = "1424410215",

series = "Canadian Conference on Electrical and Computer Engineering",

pages = "1668--1670",

booktitle = "2007 Canadian Conference on Electrical and Computer Engineering, CCECD",

note = "2007 Canadian Conference on Electrical and Computer Engineering, CCECD ; Conference date: 22-04-2007 Through 26-04-2007",

}

Johnstone, RW, Foulds, IG & Parameswaran, M 2007, Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water. in 2007 Canadian Conference on Electrical and Computer Engineering, CCECD., 4233076, Canadian Conference on Electrical and Computer Engineering, pp. 1668-1670, 2007 Canadian Conference on Electrical and Computer Engineering, CCECD, Vancouver, BC, Canada, 04/22/07. https://doi.org/10.1109/CCECE.2007.417

Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water. / Johnstone, Robert W.; Foulds, Ian G.; Parameswaran, M.
2007 Canadian Conference on Electrical and Computer Engineering, CCECD. 2007. p. 1668-1670 4233076 (Canadian Conference on Electrical and Computer Engineering).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water

AU - Johnstone, Robert W.

AU - Foulds, Ian G.

AU - Parameswaran, M.

PY - 2007

Y1 - 2007

N2 - Polymethyl methacrylate (PMMA) is a transparent thermoplastic with important applications as a positive resist for various radiation sources. For photo-patterning, PMMA is used with wavelengths shorter than 250nm, as that is the commonly accepted upper limit of effectiveness. However, we have shown patterning of non-amplified PMMA films at 254nm. Data for the etch depth as a function of dose (0 to 10 hours), developer temperature (20°C to 30°C), and etch time was collected. Developer speeds of up several microns a minute are possible, and the selectivity of exposed over unexposed PMMA can reach nearly 650. This demonstrates the feasibility of PMMA exposure using deep UV at 254nm.

AB - Polymethyl methacrylate (PMMA) is a transparent thermoplastic with important applications as a positive resist for various radiation sources. For photo-patterning, PMMA is used with wavelengths shorter than 250nm, as that is the commonly accepted upper limit of effectiveness. However, we have shown patterning of non-amplified PMMA films at 254nm. Data for the etch depth as a function of dose (0 to 10 hours), developer temperature (20°C to 30°C), and etch time was collected. Developer speeds of up several microns a minute are possible, and the selectivity of exposed over unexposed PMMA can reach nearly 650. This demonstrates the feasibility of PMMA exposure using deep UV at 254nm.

KW - 254nm light source

KW - DUV patterning

KW - PMMA

KW - Polymethyl methacrylate

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DO - 10.1109/CCECE.2007.417

M3 - Conference contribution

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SN - 1424410215

SN - 9781424410217

T3 - Canadian Conference on Electrical and Computer Engineering

SP - 1668

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BT - 2007 Canadian Conference on Electrical and Computer Engineering, CCECD

T2 - 2007 Canadian Conference on Electrical and Computer Engineering, CCECD

Y2 - 22 April 2007 through 26 April 2007

ER -

Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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